onsemi_UMC3NT1G
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onsemi
UMC3NT1G

293-UMC3NT1G
PDF Datasheet
Complementary Bipolar Digital Transistor (BRT), SC-88A (SC-70-5 / SOT-353), 3000-REEL
8 Weeks

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ISO9001
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Tech Specifications

Package/Case
SC
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
hFE Min
35
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UMC3NT1G Description

UMC3NT1G Description

The UMC3NT1G is a Bipolar Transistor Array from onsemi, featuring pre-biased NPN/PNP configurations. This product is designed for applications requiring high performance and reliability in a compact surface-mount package. With a maximum collector current of 100mA, the UMC3NT1G offers excellent current handling capabilities. Its low Vce saturation of 250mV at 300µA and 10mA ensures efficient operation in low-voltage circuits. The device is also designed to handle up to 150mW of power, making it suitable for a wide range of applications.

UMC3NT1G Features

  • Technical Specifications:

    • Maximum Collector Current (Ic): 100mA
    • Base Resistor (R1): 10kOhms
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • Maximum Power: 150mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
    • Current - Collector Cutoff (Max): 500nA
  • Performance Benefits:

    • Surface Mount Technology for compact design and ease of integration
    • Low Vce saturation for efficient operation in low-voltage circuits
    • High power handling capability for reliable performance in demanding applications
    • Pre-biased NPN/PNP configuration for simplified design and reduced component count
  • Unique Advantages:

    • Active product status ensures ongoing availability and support from onsemi
    • REACH Unaffected and RoHS3 Compliant for environmental and regulatory compliance
    • Moisture Sensitivity Level (MSL) 1 for unlimited storage and handling flexibility

UMC3NT1G Applications

The UMC3NT1G is ideal for a variety of applications where high performance, reliability, and compact design are critical. Some specific use cases include:

  1. Audio Amplifiers: The UMC3NT1G's low Vce saturation and high power handling make it suitable for audio amplifiers, providing efficient and reliable amplification in compact devices.
  2. Power Management Circuits: Its ability to handle up to 150mW of power makes it an excellent choice for power management circuits in consumer electronics and industrial applications.
  3. Signal Processing: The UMC3NT1G's pre-biased configuration simplifies design and reduces component count, making it ideal for signal processing applications in communication systems and instrumentation.
  4. Automotive Electronics: The device's robust performance and reliability make it suitable for automotive electronics, such as power windows, door locks, and lighting systems.

Conclusion of UMC3NT1G

The UMC3NT1G from onsemi is a high-performance Bipolar Transistor Array that offers a unique combination of technical specifications, performance benefits, and unique advantages. Its pre-biased NPN/PNP configuration, low Vce saturation, and high power handling capabilities make it an ideal choice for a wide range of applications, including audio amplifiers, power management circuits, signal processing, and automotive electronics. With its active product status, REACH Unaffected and RoHS3 Compliant certifications, and Moisture Sensitivity Level (MSL) 1, the UMC3NT1G is a reliable and environmentally friendly solution for demanding applications in the electronics industry.

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