STMicroelectronics

SCTH90N65G2V-7  

Single FETs, MOSFETs

SCTH90N65G2V-7 Description

The SCTH90N65G2V-7 is a high-performance Silicon Carbide Field-Effect Transistor (SiCFET) from STMicroelectronics. This N-Channel MOSFET is designed for high-power applications, offering superior performance and reliability. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 90A at 25°C, the SCTH90N65G2V-7 is ideal for demanding applications that require high voltage and current handling capabilities.

SCTH90N65G2V-7 Features

• High Voltage and Current Handling: The SCTH90N65G2V-7 can handle a maximum drain-to-source voltage of 650V and a continuous drain current of 90A at 25°C, making it suitable for high-power applications.
• Low On-Resistance: With a maximum Rds(on) of 26mΩ at 50A and 18V, the SCTH90N65G2V-7 offers low power dissipation and high efficiency.
• Silicon Carbide Technology: The SiCFET technology provides faster switching speeds, lower switching losses, and improved thermal stability compared to traditional silicon-based MOSFETs.
• Robust Package: The H2PAK-7 package offers excellent thermal performance and mechanical stability, ensuring reliable operation in harsh environments.
• Compliance and Environmental Standards: The SCTH90N65G2V-7 is REACH unaffected, RoHS3 compliant, and has a moisture sensitivity level (MSL) of 1, making it suitable for various applications without environmental concerns.

SCTH90N65G2V-7 Applications

The SCTH90N65G2V-7 is ideal for a wide range of high-power applications, including:

• Industrial Motor Drives: The high voltage and current ratings make it suitable for driving industrial motors in applications such as conveyor systems, pumps, and fans.
• Power Supplies: The low on-resistance and fast switching capabilities make it an excellent choice for high-efficiency power supply designs.
• Renewable Energy Systems: The SCTH90N65G2V-7 can be used in solar inverters, wind turbine converters, and other renewable energy systems that require high voltage and current handling.
• Electric Vehicles: The high power ratings and robust package make it suitable for use in electric vehicle charging systems and powertrain control.

Conclusion of SCTH90N65G2V-7

The SCTH90N65G2V-7 is a high-performance SiCFET from STMicroelectronics that offers superior voltage and current handling capabilities, low on-resistance, and fast switching speeds. Its robust package and compliance with environmental standards make it an ideal choice for a wide range of high-power applications, including industrial motor drives, power supplies, renewable energy systems, and electric vehicles. With its unique features and advantages over similar models, the SCTH90N65G2V-7 is a reliable and efficient solution for demanding high-power applications.

SCTH90N65G2V-7 Documents

Download datasheets and manufacturer documentation for SCTH90N65G2V-7

Datasheets :

SCTH90N65G2V-7      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021      

HTML Datasheet :

SCTH90N65G2V-7      

PCN Design/Specification :

SCTH90N65G2V-7 Wire Bond Chg 16/Nov/2020