German
Japanese
Portuguese
Korea
Mexico
Dutch
STMicroelectronics
STB11NM60-1
278-STB11NM60-1
PDF Datasheet
600V N-CH MOSFET, 11A, 450mR, I2PAK Power Transistor
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
TO-262-3
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
650V
Fall Time
11ns
Gate to Source Voltage (Vgs)
30V
STB11NM60-1 Description
N-Channel 650 V 11A (Tc) 160W (Tc) Through Hole I2PAK
FAQ
What package or case is STB11NM60-1 available in?
STB11NM60-1 is available in the TO-262-3 package / case.
What voltage specification is listed for STB11NM60-1?
Is STB11NM60-1 currently in stock?
What is STB11NM60-1?
What is the mounting type of STB11NM60-1?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
