STMicroelectronics
STS10P3LLH6  
Single FETs, MOSFETs

STMicroelectronics
STS10P3LLH6
278-STS10P3LLH6
Ersa
STMicroelectronics-STS10P3LLH6-datasheets-6377354.pdf
MOSFET P-CH 30V 10A 8SO
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    STS10P3LLH6 Description

    STS10P3LLH6 Description

    The STS10P3LLH6 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, specifically designed for applications requiring robust power management and efficient switching. This P-Channel MOSFET features a 30V drain-to-source voltage (Vdss) capability, making it suitable for a wide range of power electronics applications. With a continuous drain current of 10A at 25°C, the STS10P3LLH6 can handle significant power loads while maintaining low power dissipation of up to 2.7W.

    STS10P3LLH6 Features

    • Technology: Utilizing advanced MOSFET technology, the STS10P3LLH6 offers superior performance and reliability.
    • Input Capacitance (Ciss): With a maximum of 3350 pF at 25V, the STS10P3LLH6 ensures fast switching and minimal signal distortion.
    • Gate Charge (Qg): The maximum gate charge of 33 nC at 4.5V contributes to efficient power usage and quick response times.
    • Rds On (Max): At 12mOhm with a drain current of 5A and a gate-to-source voltage of 10V, the STS10P3LLH6 provides low on-resistance for minimal power loss.
    • Vgs(th) (Max): The threshold voltage of 1V at a minimum drain current of 250µA ensures reliable operation and consistent performance.
    • Series: The STS10P3LLH6 belongs to the STripFET™ H6 series, known for its high efficiency and low noise characteristics.
    • Mounting Type: Surface Mount technology allows for compact design and easy integration into various electronic systems.

    STS10P3LLH6 Applications

    The STS10P3LLH6 is ideal for applications where high power handling and efficient switching are crucial. Some specific use cases include:

    • Power Supplies: Due to its high voltage and current ratings, the STS10P3LLH6 is perfect for power supply designs in consumer electronics and industrial equipment.
    • Motor Controls: The low on-resistance and high current capability make it suitable for motor control applications, such as in robotics and automation systems.
    • Automotive Electronics: The STS10P3LLH6 can be used in various automotive electronic systems, such as engine management and lighting control, where reliability and performance are paramount.

    Conclusion of STS10P3LLH6

    The STS10P3LLH6 from STMicroelectronics stands out as a robust and efficient MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its unique features, such as low gate charge and input capacitance, make it an excellent choice for power electronics applications where performance and reliability are critical. With its compliance to REACH and RoHS standards, the STS10P3LLH6 is not only a high-performance component but also an environmentally responsible choice for designers.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STS10P3LLH6 Documents

    Download datasheets and manufacturer documentation for STS10P3LLH6

    Ersa STS10P3LLH6      
    Ersa STS10P3LLH6      

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