The STS10P3LLH6 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, specifically designed for applications requiring robust power management and efficient switching. This P-Channel MOSFET features a 30V drain-to-source voltage (Vdss) capability, making it suitable for a wide range of power electronics applications. With a continuous drain current of 10A at 25°C, the STS10P3LLH6 can handle significant power loads while maintaining low power dissipation of up to 2.7W.
STS10P3LLH6 Features
Technology: Utilizing advanced MOSFET technology, the STS10P3LLH6 offers superior performance and reliability.
Input Capacitance (Ciss): With a maximum of 3350 pF at 25V, the STS10P3LLH6 ensures fast switching and minimal signal distortion.
Gate Charge (Qg): The maximum gate charge of 33 nC at 4.5V contributes to efficient power usage and quick response times.
Rds On (Max): At 12mOhm with a drain current of 5A and a gate-to-source voltage of 10V, the STS10P3LLH6 provides low on-resistance for minimal power loss.
Vgs(th) (Max): The threshold voltage of 1V at a minimum drain current of 250µA ensures reliable operation and consistent performance.
Series: The STS10P3LLH6 belongs to the STripFET™ H6 series, known for its high efficiency and low noise characteristics.
Mounting Type: Surface Mount technology allows for compact design and easy integration into various electronic systems.
STS10P3LLH6 Applications
The STS10P3LLH6 is ideal for applications where high power handling and efficient switching are crucial. Some specific use cases include:
Power Supplies: Due to its high voltage and current ratings, the STS10P3LLH6 is perfect for power supply designs in consumer electronics and industrial equipment.
Motor Controls: The low on-resistance and high current capability make it suitable for motor control applications, such as in robotics and automation systems.
Automotive Electronics: The STS10P3LLH6 can be used in various automotive electronic systems, such as engine management and lighting control, where reliability and performance are paramount.
Conclusion of STS10P3LLH6
The STS10P3LLH6 from STMicroelectronics stands out as a robust and efficient MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its unique features, such as low gate charge and input capacitance, make it an excellent choice for power electronics applications where performance and reliability are critical. With its compliance to REACH and RoHS standards, the STS10P3LLH6 is not only a high-performance component but also an environmentally responsible choice for designers.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STS10P3LLH6 Documents
Download datasheets and manufacturer documentation for STS10P3LLH6
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Shipping Rate
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