STMicroelectronics_STW78N65M5

STMicroelectronics
STW78N65M5  
Single FETs, MOSFETs

STMicroelectronics
STW78N65M5
278-STW78N65M5
Ersa
STMicroelectronics-STW78N65M5-datasheets-8766977.pdf
MOSFET N-CH 650V 69A TO247
In Stock : 9336

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STW78N65M5 Description

STW78N65M5 Description

The STW78N65M5 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for automotive applications. It features a drain to source voltage (Vdss) of 650V, making it suitable for high-voltage applications. The device has a continuous drain current (Id) of 69A at 25°C, ensuring robust performance in demanding conditions. With a maximum power dissipation of 450W, the STW78N65M5 can handle significant thermal loads.

STW78N65M5 Features

  • High Voltage Rating: The STW78N65M5 boasts a drain to source voltage (Vdss) of 650V, making it ideal for high-voltage applications.
  • Robust Current Handling: With a continuous drain current (Id) of 69A at 25°C, the device can handle significant current loads.
  • Low On-Resistance: The maximum on-resistance (Rds On) is 32mOhm at 34.5A and 10V, ensuring low power dissipation and high efficiency.
  • High Gate Voltage: The maximum gate-source voltage (Vgs) is ±25V, providing flexibility in gate drive requirements.
  • Automotive Grade: The STW78N65M5 is designed for automotive applications, making it suitable for use in harsh environments.
  • Through Hole Mounting: The device is available in a through-hole package, providing ease of integration in various applications.

STW78N65M5 Applications

The STW78N65M5 is ideal for a wide range of automotive applications, including:

  • Electric Vehicle (EV) Charging Systems: The high voltage rating and robust current handling make it suitable for EV charging systems.
  • Battery Management Systems: The device can be used in battery management systems for electric and hybrid vehicles.
  • Power Train Control: The STW78N65M5 can be used in power train control applications, such as motor control and power conversion.
  • Industrial Applications: Due to its high voltage and current ratings, the device can also be used in industrial applications, such as motor drives and power supplies.

Conclusion of STW78N65M5

The STW78N65M5 is a high-performance MOSFET from STMicroelectronics, offering a combination of high voltage, robust current handling, and low on-resistance. Its automotive-grade design and through-hole mounting make it suitable for a wide range of applications, including electric vehicle charging systems, battery management systems, and power train control. With its unique features and advantages, the STW78N65M5 is an excellent choice for demanding automotive and industrial applications.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Operating Range
ECCN (EU)
RoHs compliant

STW78N65M5 Documents

Download datasheets and manufacturer documentation for STW78N65M5

Ersa IPG/14/8475 16/May/2014      
Ersa STW78N65M5      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STW78N65M5 View All Specifications      
Ersa STW78N65M5      

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