The CSD18543Q3AT is a high-performance MOSFET (Metal Oxide) from Texas Instruments, designed for applications that require efficient power management and high current handling capabilities. This N-Channel MOSFET features a drain-to-source voltage (Vdss) of 60V, a continuous drain current (Id) of 12A at 25°C and 60A at case temperature (Tc), and a maximum power dissipation of 66W. With its NexFET™ series, this device offers superior performance and reliability.
CSD18543Q3AT Features
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id): 12A (Ta), 60A (Tc)
The CSD18543Q3AT is ideal for a variety of applications where high efficiency and power handling are critical. Some specific use cases include:
Power Management: In power supply designs, this MOSFET can handle high currents with low on-resistance, reducing power losses and improving efficiency.
Motor Control: Its high current capability and low gate charge make it suitable for motor control applications, where fast switching and high efficiency are required.
Automotive Applications: The device's robustness and high power dissipation capability make it suitable for automotive applications, such as electric vehicle chargers and powertrain control systems.
Industrial Control: In industrial control systems, the CSD18543Q3AT can be used for high-power switching and motor control, providing reliable performance in demanding environments.
Conclusion of CSD18543Q3AT
The CSD18543Q3AT from Texas Instruments is a powerful MOSFET designed for high-efficiency power management and motor control applications. Its NexFET™ technology, combined with its high drain current and low on-resistance, make it an excellent choice for demanding applications. With its REACH unaffected status, RoHS3 compliance, and moisture sensitivity level 1, this device is not only high-performing but also environmentally friendly and reliable. The CSD18543Q3AT is a versatile and powerful solution for engineers looking to optimize power efficiency and performance in their designs.
Tech Specifications
Unit Weight
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Fall Time
Automotive
RoHS
Maximum IDSS (uA)
Typical Turn-On Delay Time
REACH Status
Channel Type
Rds(on) at VGS=10 V (max) (mΩ)
Maximum Continuous Drain Current (A)
VGSTH typ (typ) (V)
Maximum Pulsed Drain Current @ TC=25°C (A)
Operating temperature range (°C)
Maximum Drain Source Voltage (V)
Rds On (Max) @ Id, Vgs
Standard Package Name
Typical Reverse Recovery Charge (nC)
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Vgs th - Gate-Source Threshold Voltage
Package
Maximum Power Dissipation on PCB @ TC=25°C (W)
Maximum Gate Resistance (Ohm)
Logic level
Typical Reverse Recovery Time (ns)
Qg - Gate Charge
Power Dissipation (Max)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Vgs (Max)
Typical Drain Source Resistance @ 25°C (mOhm)
Maximum Operating Temperature
Width
RoHS Status
Typical Gate Threshold Voltage (V)
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Typical Diode Forward Voltage (V)
Type
Typical Output Capacitance (pF)
Length
Part Status
Maximum Gate Threshold Voltage (V)
Lead finish / Ball material
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
VGS (V)
VDS (V)
QGD (typ) (nC)
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
ID - package limited (A)
Transistor Type
Package / Case
Number of Channels
Technology
EU RoHS
Carrier
Rds On - Drain-Source Resistance
ID - silicon limited at TC=25°C (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Resistance (mOhm)
ECCN
MSL rating / Peak reflow
Mounting Type
Vgs(th) (Max) @ Id
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
Pin Count
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Pins
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Rating
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
QG (typ) (nC)
Typical Fall Time (ns)
Maximum Positive Gate Source Voltage (V)
Mfr
Height
Mounting Style
Rds(on) at VGS=4.5 V (max) (mΩ)
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Gate Plateau Voltage (V)
Typical Turn-Off Delay Time
Material
Package Length
QGS (typ) (nC)
REACH
Series
Operating Junction Temperature (°C)
Forward Transconductance - Min
Pd - Power Dissipation
Base Product Number
CSD18543Q3AT Documents
Download datasheets and manufacturer documentation for CSD18543Q3AT
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