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Tech Specifications
Continuous Drain Current (ID)
4.1A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
130mR
Drain to Source Voltage (Vdss)
200V
Fall Time
10ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.2nF
Max Operating Temperature
150°C
SIE836DF-T1-GE3 Description
MOSFET 200V 18.3A 104W 130mohm @ 10V
FAQ
What is the mounting type of SIE836DF-T1-GE3?
SIE836DF-T1-GE3 uses a Surface Mount mounting style based on the listed product specifications.
Is SIE836DF-T1-GE3 currently in stock?
What is SIE836DF-T1-GE3?
What operating temperature range does SIE836DF-T1-GE3 support?
Are there related or alternative parts for SIE836DF-T1-GE3?
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