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Tech Specifications
Package/Case
SOIC
Continuous Drain Current (ID)
60A
Drain to Source Resistance
3.8mR
Drain to Source Voltage (Vdss)
40V
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.23nF
Max Operating Temperature
150°C
SIR646DP-T1-GE3 Description
MOSFET 40V .0038ohm@ 10V 60A N-CH T-FET
FAQ
Are there related or alternative parts for SIR646DP-T1-GE3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
Is SIR646DP-T1-GE3 currently in stock?
What voltage specification is listed for SIR646DP-T1-GE3?
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What is the mounting type of SIR646DP-T1-GE3?
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