STMicroelectronics_IRF640ST4
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STMicroelectronics
IRF640ST4

285-IRF640ST4
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3

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Tech Specifications

Package/Case
D2PAK
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
180mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
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IRF640ST4 Description

18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3

FAQ

What is IRF640ST4?
IRF640ST4 is a RF FETs, MOSFETs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
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What voltage specification is listed for IRF640ST4?
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