


STMicroelectronics
IRF640ST4
285-IRF640ST4
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
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Package/Case
D2PAK
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
180mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
IRF640ST4 Description
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
FAQ
What is IRF640ST4?
IRF640ST4 is a RF FETs, MOSFETs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
Are there related or alternative parts for IRF640ST4?
Is IRF640ST4 currently in stock?
What voltage specification is listed for IRF640ST4?
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