STMicroelectronics_PD57002
original

STMicroelectronics
PD57002

285-PD57002
PDF Datasheet
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, POWER, PLASTIC, SO-2

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ISO9001
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Tech Specifications

Continuous Drain Current (ID)
250mA
Drain to Source Breakdown Voltage
65V
Drain to Source Voltage (Vdss)
65V
Frequency
960MHz
Gain
15dB
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
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PD57002 Description

PD57002 Description

The PD57002 from STMicroelectronics is a high-performance RF LDMOS MOSFET designed for demanding RF power amplification applications. Operating at a frequency of 960MHz, this device delivers 2W output power with a 15dB gain, making it ideal for high-efficiency RF systems. Rated for 65V and tested at 28V/10mA, it ensures reliable performance under stringent conditions. The LDMOS technology provides superior thermal stability and linearity, critical for modern wireless communication systems. Although marked as Obsolete, its robust design and compliance with ROHS3 and REACH Unaffected standards make it a viable choice for legacy or specialized applications. Packaged in a Tube, it meets MSL 3 (168 Hours) moisture sensitivity requirements.

PD57002 Features

  • High Gain & Efficiency: 15dB gain ensures strong signal amplification with minimal loss.
  • LDMOS Technology: Offers excellent thermal performance and linearity for RF applications.
  • Wide Voltage Range: Rated up to 65V, tested at 28V for consistent operation.
  • Compact Power Handling: 2W output power in a POWERSO10 package, suitable for space-constrained designs.
  • Compliance: ROHS3 Compliant and REACH Unaffected, adhering to environmental regulations.
  • Frequency Optimization: Optimized for 960MHz, ideal for specific RF bands.

PD57002 Applications

  • Wireless Infrastructure: Base stations, repeaters, and RF power amplifiers in 960MHz systems.
  • Industrial RF Equipment: Used in high-power RF generators and industrial heating systems.
  • Military & Aerospace: Reliable performance in harsh environments due to LDMOS robustness.
  • Legacy Systems: Suitable for maintaining or upgrading older RF designs requiring high gain and efficiency.

Conclusion of PD57002

The PD57002 stands out as a high-gain, efficient LDMOS RF MOSFET for specialized 960MHz applications. Its 2W output power, 15dB gain, and 65V rating make it a strong performer in wireless and industrial RF systems. While obsolete, its ROHS3 compliance and LDMOS advantages ensure continued relevance in legacy or niche markets. Engineers seeking a reliable, high-efficiency RF amplifier for fixed-frequency systems will find this component a compelling choice.

FAQ

What package or case is PD57002 available in?
PD57002 is available in the 50 package / case.
What voltage specification is listed for PD57002?
What is PD57002?
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