STMicroelectronics_PD57002-E
original

STMicroelectronics
PD57002-E

285-PD57002-E
2W 65V 1GHz LDMOS RF Transistor, N-CH, 15dB Gain

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Tech Specifications

Continuous Drain Current (ID)
250mA
Drain to Source Breakdown Voltage
65V
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
960MHz
Gain
15dB
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
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PD57002-E Description

PD57002-E Description

The PD57002-E from STMicroelectronics is an LDMOS-based RF MOSFET designed for high-frequency power amplification applications. Operating at 960MHz with a rated voltage of 65V and a test voltage of 28V, this device delivers 2W output power at 250mA current rating, making it suitable for robust RF signal amplification. Its 15dB gain ensures efficient signal enhancement, while its LDMOS technology provides superior thermal stability and linearity compared to conventional MOSFETs. Packaged in a Tube and compliant with ROHS3 and REACH Unaffected standards, the PD57002-E is ideal for demanding RF environments despite its Obsolete status.

PD57002-E Features

  • High-Frequency Performance: Optimized for 960MHz operation, enabling use in telecom and broadcast systems.
  • LDMOS Technology: Delivers enhanced thermal efficiency, linearity, and power density over traditional MOSFETs.
  • Power Efficiency: 2W output power at 28V test voltage ensures reliable amplification with minimal distortion.
  • Compact Gain: 15dB gain improves signal integrity in low-power applications.
  • Compliance: Meets ROHS3 and REACH Unaffected environmental standards, with MSL 3 (168 Hours) moisture sensitivity.
  • Robust Packaging: Tube packaging protects the device during handling and assembly.

PD57002-E Applications

The PD57002-E excels in:

  • RF Power Amplifiers: Ideal for base stations, repeaters, and RF transmitters requiring stable high-frequency amplification.
  • Telecommunication Systems: Suitable for 960MHz band applications, including cellular infrastructure and point-to-point radios.
  • Broadcast Equipment: Enhances signal strength in FM/UHF transmitters and TV broadcast systems.
  • Industrial RF Systems: Used in ISM band devices and RF heating equipment due to its high thermal tolerance.

Conclusion of PD57002-E

The PD57002-E stands out as a high-performance LDMOS RF MOSFET, offering 15dB gain, 2W output power, and exceptional thermal stability for 960MHz applications. While marked Obsolete, its ROHS3 compliance and REACH Unaffected status make it a viable choice for legacy or niche RF designs. Its efficiency in telecom and broadcast systems ensures reliable performance, though newer alternatives may be preferred for cutting-edge projects. Engineers seeking a proven, high-gain RF amplifier for demanding environments will find the PD57002-E a capable solution.

FAQ

What package or case is PD57002-E available in?
PD57002-E is available in the 50 package / case.
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