STMicroelectronics_PD57006-E
original

STMicroelectronics
PD57006-E

285-PD57006-E
PDF Datasheet
6W 65V 1GHz N-CH LDMOS RF Transistor, SOIC

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Tech Specifications

Package/Case
SOIC
Continuous Drain Current (ID)
1A
Drain to Source Breakdown Voltage
65V
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
945MHz
Gain
15dB
Gate to Source Voltage (Vgs)
20V
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PD57006-E Description

PD57006-E Description

The PD57006-E from STMicroelectronics is an LDMOS-based RF MOSFET designed for high-performance RF amplification applications. Operating at 945MHz with a rated voltage of 65V and a test voltage of 28V, this device delivers 6W output power at a 1A current rating, making it suitable for medium-power RF systems. Its 15dB gain ensures efficient signal amplification, while the 70mA test current highlights its low-power operational efficiency. Packaged in a Tube format and compliant with ROHS3 and REACH Unaffected standards, the PD57006-E meets stringent environmental and regulatory requirements. Although marked as Obsolete, its robust LDMOS technology ensures reliability in demanding RF environments.

PD57006-E Features

  • High Power Output: Delivers 6W at 945MHz, ideal for RF amplification.
  • Efficient Gain: 15dB gain enhances signal strength with minimal distortion.
  • Wide Voltage Range: Supports 28V test voltage and 65V rated voltage for versatile applications.
  • Low Power Consumption: 70mA test current ensures energy-efficient operation.
  • Robust Technology: LDMOS architecture provides high linearity and thermal stability.
  • Compliance: ROHS3 Compliant and REACH Unaffected, meeting environmental standards.
  • Packaging: Supplied in Tube packaging with MSL 3 (168 Hours) moisture sensitivity.

PD57006-E Applications

The PD57006-E excels in RF systems requiring medium-power amplification, including:

  • Base Station Transmitters: Enhances signal clarity and range in 945MHz cellular networks.
  • RF Amplifiers: Ideal for L-band and UHF applications due to its high gain and linearity.
  • Military Communications: Reliable performance in secure RF links and radar systems.
  • Industrial RF Equipment: Suitable for ISM band devices and wireless infrastructure.

Conclusion of PD57006-E

The PD57006-E is a high-performance LDMOS RF MOSFET offering a balance of power, efficiency, and gain for specialized RF applications. While obsolete, its 6W output, 15dB gain, and 65V voltage tolerance make it a viable choice for legacy systems or niche designs requiring robust RF amplification. Its compliance with ROHS3 and REACH ensures alignment with modern environmental standards, while its LDMOS technology guarantees durability in high-frequency environments. Engineers seeking reliable 945MHz amplification in base stations, military, or industrial systems may still find value in this component.

FAQ

What package or case is PD57006-E available in?
PD57006-E is available in the SOIC package / case.
What operating temperature range does PD57006-E support?
Are there related or alternative parts for PD57006-E?
What voltage specification is listed for PD57006-E?
Is PD57006-E currently in stock?
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