STMicroelectronics_PD57006S-E
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STMicroelectronics
PD57006S-E

285-PD57006S-E
PDF Datasheet
6W 65V 945MHz N-CH LDMOS RF Transistor, 15dB Gain

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ISO9001
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ISO14001
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Tech Specifications

Continuous Drain Current (ID)
1A
Drain to Source Breakdown Voltage
65V
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
945MHz
Gain
15dB
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
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PD57006S-E Description

PD57006S-E Description

The PD57006S-E from STMicroelectronics is an LDMOS-based RF MOSFET designed for high-power amplification in the 945MHz frequency range. Operating at a rated voltage of 65V and delivering 6W output power, this device is optimized for robust RF performance with a test voltage of 28V and test current of 70mA. Packaged in a POWERSO-10RF tube, it offers 15dB gain, making it suitable for demanding RF applications. Although marked as Obsolete, its ROHS3 compliance and REACH unaffected status ensure adherence to environmental standards. The Moisture Sensitivity Level (MSL 3) indicates a 168-hour floor life, requiring careful handling during assembly.

PD57006S-E Features

  • High Power Output: Delivers 6W at 945MHz, ideal for RF amplification.
  • LDMOS Technology: Ensures high efficiency, thermal stability, and linearity in RF circuits.
  • Wide Voltage Range: Supports 28V test voltage and 65V rated voltage for versatile applications.
  • High Gain: 15dB gain enhances signal strength with minimal noise.
  • Robust Packaging: POWERSO-10RF ensures mechanical durability and thermal dissipation.
  • Compliance: ROHS3, REACH, and EAR99 certified, meeting global regulatory standards.

PD57006S-E Applications

  • Base Station Amplifiers: Optimized for 945MHz RF power stages in telecom infrastructure.
  • Industrial RF Systems: Suitable for ISM band applications, including wireless sensors and control systems.
  • Military & Aerospace: Reliable performance in high-stress environments due to LDMOS robustness.
  • Broadcast Equipment: Used in FM/UHF transmitters requiring high linearity and efficiency.

Conclusion of PD57006S-E

The PD57006S-E stands out for its LDMOS technology, high gain, and 6W output, making it a strong choice for RF power amplification despite its obsolete status. Its thermal resilience, compliance, and packaging cater to telecom, industrial, and aerospace applications. Engineers seeking a reliable, high-performance RF MOSFET for 945MHz systems will find this device well-suited, though alternative modern equivalents should be considered for future designs.

FAQ

What is PD57006S-E?
PD57006S-E is a RF FETs, MOSFETs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
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