STMicroelectronics

PD57006TR-E

PD57006TR-E Description

The PD57006TR-E from STMicroelectronics is a high-performance RF LDMOS MOSFET designed for demanding RF power amplification applications. Operating at 945 MHz with a rated voltage of 65 V and a test voltage of 28 V, this device delivers 6 W of output power while maintaining a robust 1 A current rating. Its LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology ensures high efficiency, linearity, and thermal stability, making it suitable for high-frequency RF systems. Packaged in a Tape & Reel (TR) POWERSO-10RF format, it is optimized for automated assembly processes. Although marked as Obsolete, it remains a reliable choice for legacy designs requiring proven performance.

PD57006TR-E Features

• High Gain (15 dB): Enhances signal amplification efficiency in RF stages.
• LDMOS Technology: Offers superior thermal management and linearity compared to conventional MOSFETs.
• Wide Voltage Range: Supports operation up to 65 V, with testing at 28 V for optimal performance validation.
• 6 W Output Power: Ideal for medium-power RF amplification needs.
• RoHS3 Compliant & REACH Unaffected: Meets environmental and regulatory standards.
• Moisture Sensitivity Level (MSL 3): Requires careful handling but allows 168 hours of exposure before baking.
• Compact POWERSO-10RF Package: Saves board space while ensuring efficient heat dissipation.

PD57006TR-E Applications

This RF MOSFET excels in:

• Base Station Amplifiers: Provides stable amplification in 945 MHz cellular infrastructure.
• Industrial RF Systems: Suitable for high-reliability applications like radar and telemetry.
• Broadcast Equipment: Ensures clean signal amplification for FM/UHF transmitters.
• Legacy Military Comms: Trusted in rugged environments due to LDMOS robustness.
• Test & Measurement Gear: Delivers precise amplification for signal generators and analyzers.

Conclusion of PD57006TR-E

The PD57006TR-E combines LDMOS efficiency, high gain, and medium-power output in a compact package, making it a standout for RF amplification despite its obsolete status. Its 945 MHz optimization and 28 V test voltage ensure reliability in critical applications like base stations and industrial systems. While newer alternatives exist, this model remains a cost-effective solution for designs prioritizing proven performance and regulatory compliance. Engineers should evaluate stock availability for long-term projects.