STMicroelectronics_PD85006-E
original

STMicroelectronics
PD85006-E

285-PD85006-E
RF MOSFET N-CH 40V 2A 1GHz 3-Pin PowerSO-10RF SMT

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Tech Specifications

Basic Package Type
Lead-Frame SMT
Package Family Name
PowerSO-10RF (Formed lead)
Package/Case
PowerSO-10RF (Formed lead)
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
9.5
Package Width (mm)
9.4
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PD85006-E Description

PD85006-E Description

The PD85006-E from STMicroelectronics is an LDMOS RF MOSFET designed for high-performance RF amplification applications. Operating at 870MHz with a 40V rated voltage and 2A current rating, this device delivers 6W output power at 13.6V test voltage, making it suitable for demanding RF environments. With a 17dB gain, it ensures efficient signal amplification while maintaining stability. The POWERSO10 package offers robust thermal and electrical performance, ideal for compact designs. Although marked as Obsolete, its ROHS3 compliance and REACH unaffected status ensure adherence to environmental standards.

PD85006-E Features

  • High Power Efficiency: 6W output power at 200mA test current ensures reliable performance in RF circuits.
  • Optimized Gain: 17dB gain enhances signal integrity for amplification stages.
  • Robust Construction: LDMOS technology provides superior thermal stability and linearity.
  • Environmental Compliance: ROHS3 compliant and REACH unaffected, meeting stringent regulatory requirements.
  • Moisture Sensitivity: MSL 3 (168 hours) ensures handling reliability in humid conditions.
  • Compact Packaging: POWERSO10 enables space-efficient PCB layouts without compromising performance.

PD85006-E Applications

  • RF Power Amplifiers: Ideal for 870MHz base stations and transmitter modules requiring high linearity.
  • Telecommunications: Suitable for UHF band systems, including two-way radios and repeaters.
  • Industrial RF Systems: Used in ISM band applications and RF energy generators due to its high efficiency.
  • Defense & Aerospace: Reliable performance in military comms and radar systems where stability is critical.

Conclusion of PD85006-E

The PD85006-E stands out as a high-performance LDMOS RF MOSFET, offering 6W output power, 17dB gain, and robust thermal management in a compact POWERSO10 package. While obsolete, its ROHS3 compliance and REACH unaffected status make it a viable choice for legacy or specialized RF designs. Its 870MHz operation and 40V rating ensure reliability in telecom, industrial, and aerospace applications, making it a preferred solution for engineers seeking proven RF amplification technology.

FAQ

What operating temperature range does PD85006-E support?
PD85006-E has an operating temperature range of -65.
What is the mounting type of PD85006-E?
What voltage specification is listed for PD85006-E?
What is PD85006-E?
Are there related or alternative parts for PD85006-E?
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