The PD85006-E from STMicroelectronics is an LDMOS RF MOSFET designed for high-performance RF amplification applications. Operating at 870MHz with a 40V rated voltage and 2A current rating, this device delivers 6W output power at 13.6V test voltage, making it suitable for demanding RF environments. With a 17dB gain, it ensures efficient signal amplification while maintaining stability. The POWERSO10 package offers robust thermal and electrical performance, ideal for compact designs. Although marked as Obsolete, its ROHS3 compliance and REACH unaffected status ensure adherence to environmental standards.
The PD85006-E stands out as a high-performance LDMOS RF MOSFET, offering 6W output power, 17dB gain, and robust thermal management in a compact POWERSO10 package. While obsolete, its ROHS3 compliance and REACH unaffected status make it a viable choice for legacy or specialized RF designs. Its 870MHz operation and 40V rating ensure reliability in telecom, industrial, and aerospace applications, making it a preferred solution for engineers seeking proven RF amplification technology.
Download datasheets and manufacturer documentation for PD85006-E