STMicroelectronics

PD85006TR-E

PD85006TR-E Description

The PD85006TR-E is an LDMOS RF MOSFET designed for high-power applications, manufactured by STMicroelectronics. This device is characterized by its robust performance and reliable operation in demanding environments. With a current rating of 2 Amps and a power output of 5 Watts, it is well-suited for applications requiring high power efficiency. The PD85006TR-E operates at a frequency of 870 MHz and has a rated voltage of 40 V, making it an ideal choice for various RF power applications.

PD85006TR-E Features

• High Power Output: Delivers 5W of power, suitable for high-power RF applications.
• Robust Voltage Handling: Rated for 40V, ensuring reliable operation in high-voltage environments.
• Low Current Consumption: Operates with a current of 2A, reducing power consumption and heat generation.
• High Frequency Operation: Designed for 870 MHz frequency, ideal for wireless communication systems.
• LDMOS Technology: Utilizes LDMOS technology for improved efficiency and performance.
• Gain: Offers a gain of 17dB, enhancing signal strength in transmission.
• Compliance: RoHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance.
• Package: Comes in a tape and reel packaging, facilitating automated assembly processes.

PD85006TR-E Applications

The PD85006TR-E is well-suited for a variety of applications where high power and reliability are critical:

• Wireless Communication Systems: Due to its high power output and frequency range, it is ideal for base stations and other communication infrastructure.
• Broadcast Equipment: Its high gain and power handling make it suitable for broadcast transmitters.
• Military and Avionics: The robustness and high voltage rating make it a good fit for military and aviation communication systems.
• Industrial RF Applications: Its ability to handle high power and voltage makes it suitable for industrial RF applications requiring reliability and performance.

Conclusion of PD85006TR-E

The PD85006TR-E is a high-performance LDMOS RF MOSFET that stands out for its power efficiency, high voltage handling, and compliance with environmental standards. Its unique combination of features makes it an excellent choice for high-power RF applications across various industries. Despite being classified as obsolete, it remains a reliable option for legacy systems or applications where its specific performance characteristics are required.