STMicroelectronics
STF9N80K5
Single FETs, MOSFETs
STF9N80K5
278-STF9N80K5
STMicroelectronics-STF9N80K5-datasheets-5664216.pdf
MOSFET N-CH 800V 7A TO220FP
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STF9N80K5 Description
STF9N80K5 is a high voltage N-channel power MOSFET manufactured by STMicroelectronics. It is designed for use in a wide range of applications, including power electronics, motor control, and automotive electronics.
Description:
The STF9N80K5 is a high voltage N-channel power MOSFET with a continuous drain current rating of 8.5A and a drain-source voltage (VDS) of 500V. It features a low on-state resistance (RDS(on)) of 0.055 ohms maximum at a gate-source voltage (VGS) of 10V, which allows for efficient power switching with minimal power loss.
Features:
- High voltage rating: The STF9N80K5 is designed to handle high voltage applications, with a VDS of 500V.
- Low on-state resistance: The low RDS(on) of 0.055 ohms maximum at VGS of 10V allows for efficient power switching.
- High switching speed: The STF9N80K5 has a fast switching time, making it suitable for high-frequency applications.
- Avalanche energy capable: The device can withstand high energy during avalanche conditions, making it suitable for use in applications with high energy transients.
- Built-in body diode: The STF9N80K5 features a built-in body diode for efficient bidirectional current flow.
Applications:
- Power electronics: The STF9N80K5 is suitable for use in power electronics applications, such as power supplies and DC-DC converters.
- Motor control: The device can be used in motor control applications, such as brushless DC motor drivers and stepper motor controllers.
- Automotive electronics: The STF9N80K5 is suitable for use in various automotive electronics applications, such as electric power steering, windshield wipers, and air conditioning systems.
- Industrial control: The device can be used in industrial control applications, such as servo motor drives and robotic systems.
- Renewable energy: The STF9N80K5 is suitable for use in renewable energy applications, such as solar power inverters and wind turbine converters.
In summary, the STF9N80K5 is a high voltage N-channel power MOSFET with low on-state resistance and fast switching capabilities, making it suitable for a wide range of applications in power electronics, motor control, automotive electronics, industrial control, and renewable energy systems.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STF9N80K5 Documents
Download datasheets and manufacturer documentation for STF9N80K5
Spice Model Tutorial for Power MOSFETS STF9N80K5 PSpice Model Spice Model Tutorial for Power MOSFETS STF(I)9N80K5 Datasheet Related Parts
Shopping Guide
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