STMicroelectronics_STL140N4F7AG

STMicroelectronics
STL140N4F7AG  
Single FETs, MOSFETs

STMicroelectronics
STL140N4F7AG
278-STL140N4F7AG
Ersa
STMicroelectronics-STL140N4F7AG-datasheets-6565827.pdf
MOSFET N-CH 40V 120A POWERFLAT
In Stock : 1263

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STL140N4F7AG Description

STMicroelectronics' STL140N4F7AG is a high-voltage N-channel MOSFET transistor that is designed for use in a variety of power electronic applications. Here is a description of the STL140N4F7AG, including its features and applications:

Description:

The STL140N4F7AG is an N-channel enhancement mode MOSFET transistor that features a high voltage rating of 1400V and a continuous drain current of 4.7A. It is available in a TO-220F package, which is suitable for use in a wide range of power electronic applications.

Features:

  • High voltage rating of 1400V
  • Continuous drain current of 4.7A
  • Low on-state resistance (RDS(on))
  • Fast switching characteristics
  • High level of ruggedness and reliability
  • Suitable for use in a wide range of power electronic applications

Applications:

The STL140N4F7AG is suitable for use in a variety of power electronic applications, including:

  • Motor control and drive circuits
  • Power supplies and converters
  • Battery charging and management systems
  • Inverters and converters for renewable energy systems
  • High-voltage switching and protection circuits

Overall, the STL140N4F7AG is a versatile and reliable MOSFET transistor that is well-suited for use in a wide range of power electronic applications. Its high voltage rating, low on-state resistance, and fast switching characteristics make it an ideal choice for applications that require high performance and reliability.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant

STL140N4F7AG Documents

Download datasheets and manufacturer documentation for STL140N4F7AG

Ersa STL140N4F7AG      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STL140N4F7AG      

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