STMicroelectronics_STP18NM80

STMicroelectronics
STP18NM80  
Single FETs, MOSFETs

STMicroelectronics
STP18NM80
278-STP18NM80
Ersa
STMicroelectronics-STP18NM80-datasheets-8369459.pdf
MOSFET N-CH 800V 17A TO220AB
In Stock : 995

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STP18NM80 Description

STP18NM80 Description

The STP18NM80 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding power electronics applications. This device features an impressive 800V drain-to-source voltage rating, making it suitable for high-voltage switching and power management tasks. With a continuous drain current of 17A at 25°C and a maximum power dissipation of 190W, the STP18NM80 delivers robust performance in a variety of applications.

STP18NM80 Features

  • High Voltage Rating: The STP18NM80 boasts an 800V drain-to-source voltage (Vdss), making it ideal for high-voltage applications.
  • High Current Capability: Capable of handling up to 17A of continuous drain current at 25°C, this MOSFET is designed for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 295mΩ at 8.5A and 10V Vgs, the STP18NM80 offers efficient power dissipation.
  • Robust Gate Drive: The device features a maximum gate-source voltage (Vgs) of ±30V, ensuring reliable operation across a wide range of gate drive conditions.
  • Low Gate Charge: The STP18NM80 has a maximum gate charge (Qg) of 70nC at 10V Vgs, contributing to fast switching and reduced power loss.
  • Thermal Performance: Designed for operation at 150°C junction temperature (TJ), this MOSFET is suitable for high-temperature applications.
  • Package: The STP18NM80 is available in a TO220AB package, providing a robust and reliable solution for through-hole mounting.

STP18NM800 Applications

The STP18NM80 is well-suited for a variety of high-voltage and high-power applications, including:

  • Power Supplies: Ideal for high-voltage switching and power management in power supply designs.
  • Motor Control: The device's high voltage and current ratings make it suitable for motor control applications, such as electric vehicles and industrial motor drives.
  • Renewable Energy: The STP18NM80 can be used in solar inverters and wind turbine power conversion systems, where high voltage and power handling are required.
  • Industrial Automation: This MOSFET is suitable for high-voltage switching in industrial automation systems, such as robotics and process control.

Conclusion of STP18NM80

The STP18NM80 from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding high-voltage and high-power applications. Its combination of high voltage and current ratings, low on-resistance, and robust thermal performance make it an ideal choice for power supplies, motor control, renewable energy, and industrial automation systems. With its unique features and advantages, the STP18NM80 stands out as a reliable and efficient solution for a wide range of power electronics applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP18NM80 Documents

Download datasheets and manufacturer documentation for STP18NM80

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