STMicroelectronics_STP80NF70

STMicroelectronics
STP80NF70  
Single FETs, MOSFETs

STMicroelectronics
STP80NF70
278-STP80NF70
Ersa
STMicroelectronics-STP80NF70-datasheets-3556965.pdf
MOSFET N-CH 68V 98A TO220AB
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    STP80NF70 Description

    STP80NF70 Description

    The STP80NF70 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications that require high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 68V and a continuous drain current (Id) of 98A at 25°C, this device is well-suited for power electronics and motor control applications. The STP80NF70 is built using advanced MOSFET technology, ensuring high efficiency and reliability in operation.

    STP80NF70 Features

    • High Voltage and Current Handling: The STP80NF70 can handle a maximum drain-to-source voltage of 68V and a continuous drain current of 98A at 25°C, making it ideal for high-power applications.
    • Low On-Resistance: The device features a maximum on-resistance (Rds On) of 9.8mOhm at 40A and 10V, contributing to high efficiency and low power loss in the circuit.
    • Robust Gate Drive: With a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA, the STP80NF70 provides robust gate drive capabilities for reliable operation.
    • Low Input Capacitance: The device has a maximum input capacitance (Ciss) of 2550 pF at 25V, which helps reduce switching losses and improve overall performance.
    • Gate Charge Optimization: The maximum gate charge (Qg) is 75 nC at 10V, enabling fast switching and minimizing power dissipation.
    • Thermal Management: The STP80NF70 can dissipate up to 190W of power (Tc), ensuring stable operation in high-temperature environments.
    • Environmental Compliance: The device is compliant with the RoHS3 directive and has a moisture sensitivity level (MSL) of 1, indicating unlimited storage time before reflow soldering.

    STP80NF70 Applications

    The STP80NF70 is an excellent choice for a variety of high-power applications, including:

    • Power Electronics: Due to its high voltage and current ratings, the STP80NF70 is ideal for power conversion and regulation in various electronic systems.
    • Motor Control: The device's low on-resistance and fast switching capabilities make it suitable for motor drive applications, such as electric vehicles and industrial automation.
    • Industrial Automation: The STP80NF70 can be used in high-power industrial control systems, where reliability and efficiency are critical.
    • Renewable Energy Systems: The device's high voltage and current ratings make it suitable for use in solar inverters and wind power systems.

    Conclusion of STP80NF70

    The STP80NF70 from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding high-power applications. Its combination of high voltage and current ratings, low on-resistance, and robust gate drive capabilities make it an ideal choice for power electronics, motor control, and industrial automation systems. While it is not recommended for new designs, the STP80NF70 remains a reliable and efficient solution for existing applications that require its specific performance characteristics.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STP80NF70 Documents

    Download datasheets and manufacturer documentation for STP80NF70

    Ersa STP80NF70      
    Ersa STP80NF70 View All Specifications      
    Ersa STP80NF70      

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