Texas Instruments_CSD18533KCS

Texas Instruments
CSD18533KCS  
Single FETs, MOSFETs

Texas Instruments
CSD18533KCS
278-CSD18533KCS
Ersa
Texas Instruments-CSD18533KCS-datasheets-4228734.pdf
MOSFET N-CH 60V 72A/100A TO220-3
In Stock : 1016

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CSD18533KCS Description

CSD18533KCS Description

The CSD18533KCS is a high-performance N-Channel MOSFET from Texas Instruments, designed for a wide range of applications requiring high power and efficiency. With a drain-to-source voltage (Vdss) of 60V and continuous drain current ratings of 72A at 25°C and 100A at case temperature, this MOSFET delivers exceptional performance in demanding power electronic applications.

CSD18533KCS Features

  • High Power Handling: Capable of handling up to 100A of continuous drain current at case temperature, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 6.3mΩ at 75A and 10V Vgs, the CSD18533KCS offers low conduction losses, improving efficiency in power conversion systems.
  • Robust Gate Drive: A maximum gate-source voltage (Vgs) of ±20V ensures reliable operation across a wide range of gate drive conditions.
  • Low Gate Charge: A maximum gate charge (Qg) of 34nC at 10V Vgs contributes to fast switching speeds and reduced switching losses.
  • High Input Capacitance: A maximum input capacitance (Ciss) of 3025pF at 30V Vds allows for high-frequency operation with minimal Miller effect.
  • Thermal Management: Capable of dissipating up to 192W of power, making it suitable for applications with high thermal demands.
  • Compliance and Standards: ROHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance.
  • Package Type: Available in a through-hole TO220-3 package, providing a robust and reliable mechanical solution for high-power applications.

CSD18533KCS Applications

The CSD18533KCS is well-suited for a variety of high-power applications, including:

  • Power Supplies: Ideal for high-efficiency power conversion in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  • Motor Control: Effective in variable frequency drives (VFD) and electric vehicle (EV) motor control systems due to its high current and voltage ratings.
  • Renewable Energy: Suitable for solar inverters and wind power converters, where high power and efficiency are critical.
  • Industrial Automation: Reliable in high-power motor drives and industrial control systems that require robust and efficient power switching.

Conclusion of CSD18533KCS

The CSD18533KCS from Texas Instruments stands out for its high power handling, low on-resistance, and robust gate drive capabilities. Its compliance with environmental and regulatory standards, combined with its high thermal dissipation, makes it an excellent choice for a wide range of high-power applications. With its NexFET™ series pedigree, the CSD18533KCS offers a reliable and efficient solution for demanding power electronic systems.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Material
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

CSD18533KCS Documents

Download datasheets and manufacturer documentation for CSD18533KCS

Ersa Mechanical Outline Drawing       Function Diagram      
Ersa Qualification of GTBF as Additional Assembly/Test Site for Select Devices (PDF)      
Ersa Power Management Guide 2018 (Rev. R)      
Ersa CSD18533KCS TINA-TI Spice Model       CSD18533KCS PSpice Model (Rev. A)      

Shopping Guide

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