The STW26NM60 from STMicroelectronics is a high-performance N-channel 600V power MOSFET designed for demanding switching applications. Built using ST's advanced MDmesh™ technology, it delivers low on-resistance (135mΩ @ 10V, 13A) and high current handling (30A continuous drain current @ 25°C), making it ideal for high-efficiency power conversion. With a 600V drain-to-source voltage (Vdss) rating and a maximum power dissipation of 313W (Tc), this MOSFET excels in robustness and thermal performance. The device features a low gate charge (102nC @ 10V) and moderate input capacitance (2900pF @ 25V), enabling fast switching and reduced losses. Housed in a TO-247-3 package, it ensures reliable through-hole mounting for industrial applications.
The STW26NM60 is particularly suited for:
The STW26NM60 stands out as a high-efficiency, high-reliability MOSFET for power electronics, combining ST's MDmesh™ technology with excellent thermal and electrical characteristics. While marked as obsolete, its performance remains competitive for legacy designs requiring robust 600V switching. Engineers can leverage its low Rds(on), fast switching, and high power handling in applications demanding durability and efficiency. For modern designs, checking ST's latest alternatives is recommended.
Download datasheets and manufacturer documentation for STW26NM60