STMicroelectronics_STW26NM60

STMicroelectronics
STW26NM60  
Single FETs, MOSFETs

STMicroelectronics
STW26NM60
278-STW26NM60
Ersa
STMicroelectronics-STW26NM60-datasheets-8598545.pdf
MOSFET N-CH 600V 30A TO247-3
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STW26NM60 Description

STW26NM60 Description

The STW26NM60 from STMicroelectronics is a high-performance N-channel 600V power MOSFET designed for demanding switching applications. Built using ST's advanced MDmesh™ technology, it delivers low on-resistance (135mΩ @ 10V, 13A) and high current handling (30A continuous drain current @ 25°C), making it ideal for high-efficiency power conversion. With a 600V drain-to-source voltage (Vdss) rating and a maximum power dissipation of 313W (Tc), this MOSFET excels in robustness and thermal performance. The device features a low gate charge (102nC @ 10V) and moderate input capacitance (2900pF @ 25V), enabling fast switching and reduced losses. Housed in a TO-247-3 package, it ensures reliable through-hole mounting for industrial applications.

STW26NM60 Features

  • High Voltage & Current Rating: 600V Vdss and 30A Id for power-intensive applications.
  • Low Rds(on): 135mΩ @ 10V, minimizing conduction losses.
  • Fast Switching: Optimized gate charge (102nC) and low Ciss for efficient high-frequency operation.
  • Thermal Efficiency: 313W max power dissipation (Tc) ensures stable performance under load.
  • Robust Construction: ±30V Vgs(max) and MDmesh™ technology enhance durability.
  • Compliance: ROHS3 compliant, REACH unaffected, and ECCN EAR99 for global usability.

STW26NM60 Applications

The STW26NM60 is particularly suited for:

  • Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
  • Motor Drives & Inverters: Efficient control in industrial and automotive systems.
  • Uninterruptible Power Supplies (UPS): Reliable high-power switching.
  • Renewable Energy Systems: Solar inverters and wind power converters.
  • Industrial Automation: High-current switching in robotics and machinery.

Conclusion of STW26NM60

The STW26NM60 stands out as a high-efficiency, high-reliability MOSFET for power electronics, combining ST's MDmesh™ technology with excellent thermal and electrical characteristics. While marked as obsolete, its performance remains competitive for legacy designs requiring robust 600V switching. Engineers can leverage its low Rds(on), fast switching, and high power handling in applications demanding durability and efficiency. For modern designs, checking ST's latest alternatives is recommended.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

STW26NM60 Documents

Download datasheets and manufacturer documentation for STW26NM60

Ersa STW26NM60      
Ersa STW26NM60      

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