STMicroelectronics_STW68N60M6

STMicroelectronics
STW68N60M6  
Single FETs, MOSFETs

STMicroelectronics
STW68N60M6
278-STW68N60M6
Ersa
STMicroelectronics-STW68N60M6-datasheets-4912629.pdf
MOSFET N-CH 600V TO247-3
In Stock : 153

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STW68N60M6 Description

STW68N60M6 Description

The STW68N60M6 is a high-performance N-Channel MOSFET from STMicroelectronics, designed to deliver exceptional performance in a range of power electronics applications. With a drain-to-source voltage of 600V and a continuous drain current of 63A at 25°C, this device offers robust power handling capabilities. It features a low on-resistance of 41mOhm at 31.5A and 10V, ensuring efficient power dissipation and minimal power loss. The STW68N60M6 is manufactured using advanced MOSFET technology, providing high input capacitance and gate charge, enabling fast switching and reduced switching losses.

STW68N60M6 Features

  • 600V Drain-to-Source Voltage (Vdss): Capable of handling high voltage applications with ease.
  • 63A Continuous Drain Current (Id) @ 25°C: Delivers robust current handling capabilities for demanding power electronics applications.
  • Low On-Resistance (Rds On): 41mOhm at 31.5A and 10V, ensuring efficient power dissipation and minimal power loss.
  • High Input Capacitance (Ciss): 4360 pF @ 100V, enabling fast switching and reduced switching losses.
  • Low Gate Charge (Qg): 106 nC @ 10V, contributing to reduced switching losses and improved efficiency.
  • Advanced MOSFET Technology: Delivers high performance and reliability in power electronics applications.
  • Through Hole Mounting Type: Facilitates easy integration into various circuit designs.
  • ROHS3 Compliance: Ensures environmental compliance and suitability for use in a wide range of applications.
  • REACH Unaffected Status: Demonstrates adherence to strict European environmental regulations.

STW68N60M6 Applications

The STW68N60M6 is ideal for a variety of power electronics applications, including:

  • Power Supplies: Its high voltage and current handling capabilities make it suitable for use in power supply designs.
  • Motor Controls: The device's low on-resistance and high current handling capabilities make it well-suited for motor control applications.
  • Industrial Automation: Its robust performance characteristics make it an excellent choice for use in industrial automation systems.
  • Automotive Applications: The STW68N60M6's high voltage and current ratings make it suitable for use in automotive electronics, such as electric vehicle charging systems and power management systems.

Conclusion of STW68N60M6

The STW68N60M6 from STMicroelectronics is a high-performance N-Channel MOSFET designed to deliver exceptional performance in a range of power electronics applications. Its combination of high voltage and current handling capabilities, low on-resistance, and advanced MOSFET technology make it an ideal choice for use in power supplies, motor controls, industrial automation systems, and automotive applications. With its robust performance characteristics and adherence to strict environmental regulations, the STW68N60M6 is a reliable and efficient solution for demanding power electronics applications.

Tech Specifications

Unit Weight
Configuration
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Channel Mode
Product Status
Fall Time
RoHS
Drain to Source Voltage (Vdss)
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Rise Time
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
FET Type
Supplier Device Package
Qg - Gate Charge
Power Dissipation (Max)
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Pd - Power Dissipation
Base Product Number
Supplier Package
ECCN (US)
Grade
ECCN (EU)
RoHs compliant

STW68N60M6 Documents

Download datasheets and manufacturer documentation for STW68N60M6

Ersa STW68N60M6      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STW68N60M6      

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