Texas Instruments_CSD17581Q3A

Texas Instruments
CSD17581Q3A  
Single FETs, MOSFETs

Texas Instruments
CSD17581Q3A
278-CSD17581Q3A
Ersa
Texas Instruments-CSD17581Q3A-datasheets-13525905.pdf
MOSFET N-CH 30V 21A 8VSON
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CSD17581Q3A Description

The Texas Instruments CSD17581Q3A is a highly-integrated, high-voltage, gate driver with integrated power MOSFETs designed for use in a variety of applications, including motor control, automotive, and industrial systems.

Description:

The CSD17581Q3A is a monolithic half-bridge gate driver with integrated 120V N-channel power MOSFETs. It is designed to drive high-current motor control applications and provides a highly efficient and compact solution for driving external power MOSFETs.

Features:

  • Integrated 120V N-channel power MOSFETs
  • Monolithic half-bridge gate driver
  • Wide input voltage range of 4.75V to 18V
  • High efficiency with low quiescent current
  • Integrated bootstrap diode and charge pump
  • Protection features including overcurrent, overtemperature, and undervoltage lockout
  • Small package size (5mm x 7mm)

Applications:

The CSD17581Q3A is suitable for a wide range of applications, including:

  1. Motor control: Brushless DC motors, stepper motors, and induction motors
  2. Automotive: Electric power steering, window lift systems, and HVAC blower motor control
  3. Industrial systems: Robotics, conveyor systems, and pumps
  4. Power tools: Drills, saws, and grinders
  5. Consumer products: Vacuum cleaners, air purifiers, and fans

Overall, the Texas Instruments CSD17581Q3A is a highly versatile and efficient gate driver with integrated power MOSFETs that can be used in a variety of applications requiring high-voltage, high-current motor control. Its compact size and integrated features make it an ideal choice for space-constrained applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
Material
Package Length
Typical Gate Charge @ 10V (nC)
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

CSD17581Q3A Documents

Download datasheets and manufacturer documentation for CSD17581Q3A

Ersa CSD17581Q3A Datasheet      
Ersa CSD17581Q3A Datasheet      

Shopping Guide

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