Texas Instruments
CSD19533Q5AT
Single FETs, MOSFETs
CSD19533Q5AT
278-CSD19533Q5AT
Texas Instruments-CSD19533Q5AT-datasheets-10601891.pdf
MOSFET N-CH 100V 100A 8VSON
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CSD19533Q5AT Description
The CSD19533Q5AT is a high-performance, single-chip motor controller from Texas Instruments. It is designed for brushless DC (BLDC) motor control in a wide range of applications, including industrial, automotive, and consumer electronics.
Description:
The CSD19533Q5AT is a highly integrated motor controller that combines a gate driver, power MOSFETs, and control logic into a single chip. It uses a proprietary gate drive architecture to provide precise control of the motor's speed and torque. The device also includes advanced protection features to ensure reliable operation in harsh environments.
Features:
- High-Performance Gate Drive: The CSD19533Q5AT uses a proprietary gate drive architecture to provide fast and precise control of the motor's speed and torque.
- Integrated Power MOSFETs: The device includes integrated power MOSFETs, eliminating the need for external components and reducing the overall system cost and complexity.
- Advanced Protection Features: The CSD19533Q5AT includes a range of protection features, including overcurrent, overvoltage, and undervoltage protection, to ensure reliable operation in harsh environments.
- Wide Input Voltage Range: The device can operate from a wide input voltage range of 4.75V to 58V, making it suitable for a wide range of applications.
- Low Power Consumption: The CSD19533Q5AT is designed for low power consumption, making it ideal for battery-powered applications.
Applications:
The CSD19533Q5AT is suitable for a wide range of applications, including:
- Industrial Automation: The device can be used in industrial applications such as robotics, conveyor systems, and pumps.
- Automotive: The CSD19533Q5AT can be used in automotive applications such as electric power steering, windshield wipers, and air conditioning systems.
- Consumer Electronics: The device can be used in consumer electronics such as vacuum cleaners, fans, and air purifiers.
- Medical Devices: The CSD19533Q5AT can be used in medical devices such as infusion pumps and diagnostic equipment.
Overall, the CSD19533Q5AT is a high-performance, single-chip motor controller that offers precise control, advanced protection features, and low power consumption, making it suitable for a wide range of applications.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Maximum Power Dissipation on PCB @ TC=25°C (W)
Category
Maximum Gate Resistance (Ohm)
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
Typical Drain Source Resistance @ 25°C (mOhm)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Material
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Typical Diode Forward Voltage (V)
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
CSD19533Q5AT Documents
Download datasheets and manufacturer documentation for CSD19533Q5AT
CSD19533Q5A Datasheet CSD19533Q5A Datasheet Related Parts
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