STMicroelectronics_STD60NF3LLT4

STMicroelectronics
STD60NF3LLT4  
Single FETs, MOSFETs

STMicroelectronics
STD60NF3LLT4
278-STD60NF3LLT4
MOSFET N-CH 30V 60A DPAK
In Stock : 26011

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STD60NF3LLT4 Description

STD60NF3LLT4 Description

The STD60NF3LLT4 from STMicroelectronics is an N-channel 30V, 60A power MOSFET housed in a DPAK surface-mount package. Part of the STripFET™ II series, this device leverages advanced MOSFET (Metal Oxide) technology to deliver high efficiency and robust performance in power management applications. With a low on-resistance (Rds(on)) of 9.5mΩ at 30A, 10V, it minimizes conduction losses, making it ideal for high-current switching. Although marked as obsolete, it remains a reliable choice for legacy designs due to its proven reliability and compliance with ROHS3 and REACH standards.

STD60NF3LLT4 Features

  • Low Rds(on): 9.5mΩ @ 30A, 10V ensures reduced power dissipation and improved thermal performance.
  • High Current Handling: Supports 60A continuous drain current (Id) at 25°C, suitable for demanding applications.
  • Fast Switching: Optimized gate charge (Qg) of 40nC @ 4.5V and input capacitance (Ciss) of 2210pF @ 25V enable efficient high-frequency operation.
  • Robust Voltage Ratings: Vdss of 30V and Vgs(max) of ±16V provide flexibility in various circuit conditions.
  • Thermal Efficiency: 100W (Tc) power dissipation capability ensures stability under high-load conditions.
  • Packaging: DPAK (TO-252) package offers a compact footprint with excellent thermal dissipation for surface-mount designs.

STD60NF3LLT4 Applications

  • Power Supplies: DC-DC converters, SMPS, and voltage regulation modules benefit from its low Rds(on) and high current capacity.
  • Motor Control: Ideal for H-bridge configurations in brushed DC or stepper motor drivers.
  • Automotive Systems: Used in load switches, LED drivers, and battery management due to its rugged design.
  • Industrial Equipment: Suitable for relay replacements, solenoid drivers, and high-efficiency inverters.
  • Consumer Electronics: Power management in laptops, gaming consoles, and high-end audio amplifiers.

Conclusion of STD60NF3LLT4

The STD60NF3LLT4 is a high-performance N-channel MOSFET offering a balance of low resistance, high current handling, and thermal efficiency. While obsolete, its STripFET™ II technology ensures reliability for legacy or cost-sensitive designs. Its DPAK packaging and ROHS3 compliance make it a versatile choice for power switching, motor control, and industrial applications. Engineers seeking a proven 30V/60A solution with optimized switching characteristics may still find value in this component.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Supplier Package
Maximum IDSS (uA)
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
Supplier Temperature Grade
Standard Package Name
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Typical Gate to Drain Charge (nC)
SVHC
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Maximum Diode Forward Voltage (V)
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Package Width

STD60NF3LLT4 Documents

Download datasheets and manufacturer documentation for STD60NF3LLT4

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