STMicroelectronics_STP2N80K5

STMicroelectronics
STP2N80K5  
Single FETs, MOSFETs

STMicroelectronics
STP2N80K5
278-STP2N80K5
Ersa
STMicroelectronics-STP2N80K5-datasheets-4491676.pdf
MOSFET N-CH 800V 2A TO220
In Stock : 1673

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STP2N80K5 Description

STP2N80K5 Description

The STP2N80K5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications requiring high voltage and current capabilities. With a drain-source voltage rating of 800V and a continuous drain current of 2A at 25°C, this device is ideal for high-power applications in various industries. Manufactured using advanced MOSFET technology, the STP2N80K5 offers excellent performance and reliability.

STP2N80K5 Features

  • High Voltage and Current Ratings: The STP2N80K5 can handle drain-source voltages up to 800V and continuous drain currents of 2A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum on-resistance of 4.5Ω at 1A and 10V, the STP2N80K5 provides efficient power delivery with minimal power loss.
  • Low Gate Charge: The maximum gate charge is 3nC at 10V, enabling fast switching and reducing power consumption in high-frequency applications.
  • Robust Construction: The device is housed in a through-hole TO220 package, providing excellent thermal performance and mechanical stability.
  • Compliance and Certifications: The STP2N80K5 is compliant with RoHS3 standards and is REACH unaffected, ensuring environmental and regulatory compliance.

STP2N80K5 Applications

The STP2N80K5 is ideal for a wide range of high-power applications, including:

  1. Power Supplies: The high voltage and current ratings make it suitable for use in power supply designs, such as switch-mode power supplies (SMPS) and power factor correction (PFC) circuits.
  2. Motor Control: The STP2N80K5 can be used in motor control applications, such as electric vehicles, industrial automation, and robotics, where high voltage and current are required.
  3. Renewable Energy: The device can be employed in solar inverters and wind turbine power conversion systems, where high voltage and current ratings are essential.
  4. Industrial Automation: The STP2N80K5 is suitable for use in industrial automation systems, such as servo drives and variable frequency drives (VFDs), where high power and reliability are critical.

Conclusion of STP2N80K5

The STP2N80K5 is a high-performance N-Channel MOSFET from STMicroelectronics, offering excellent voltage and current ratings, low on-resistance, and fast switching capabilities. Its robust construction, compliance with environmental regulations, and wide range of applications make it an ideal choice for high-power applications in various industries. With its unique features and advantages over similar models, the STP2N80K5 is a reliable and efficient solution for demanding power electronics applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Mounting Style
Unit Weight
Vgs - Gate-Source Voltage
Id - Continuous Drain Current
Transistor Polarity
RoHS
Qg - Gate Charge
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Tradename
Transistor Type
Number of Channels
Maximum Operating Temperature
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
Rds On - Drain-Source Resistance

STP2N80K5 Documents

Download datasheets and manufacturer documentation for STP2N80K5

Ersa STx2N80K5      
Ersa STx2N80K5      

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