Texas Instruments_CSD25401Q3

Texas Instruments
CSD25401Q3  
Single FETs, MOSFETs

Texas Instruments
CSD25401Q3
278-CSD25401Q3
Ersa
Texas Instruments-CSD25401Q3-datasheets-12479789.pdf
MOSFET P-CH 20V 14A/60A 8VSON
In Stock : 65003

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

CSD25401Q3 Description

CSD25401Q3 Description

The CSD25401Q3 is a high-performance, single P-Channel MOSFET from Texas Instruments, designed for applications requiring high efficiency and reliability. With a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 14A at 25°C and 60A at Tc, this MOSFET is well-suited for demanding power management and switching applications. The NexFET™ series offers superior performance and reliability, making it an ideal choice for engineers looking to optimize their designs.

CSD25401Q3 Features

  • High Input Capacitance (Ciss): With a maximum input capacitance of 1400 pF at 10V, the CSD25401Q3 provides fast switching and reduced power loss.
  • Low Gate Charge (Qg): The maximum gate charge of 12.3 nC at 4.5V ensures efficient gate drive and low power consumption.
  • Robust Drain Current: Capable of handling continuous drain currents up to 14A at 25°C and 60A at Tc, making it suitable for high-current applications.
  • Low Rds On: With a maximum Rds On of 11.7 mOhm at 10A and 4.5V, the CSD25401Q3 offers low on-resistance and high efficiency.
  • Wide Vgs Range: The maximum Vgs of ±12V provides flexibility in gate drive voltage requirements.
  • Surface Mount Technology: The surface mount packaging allows for easy integration into compact designs.
  • Compliance with Industry Standards: The CSD25401Q3 is REACH unaffected, RoHS3 compliant, and classified under ECCN EAR99, ensuring compliance with environmental and trade regulations.

CSD25401Q3 Applications

The CSD25401Q3 is ideal for a variety of applications where high efficiency, reliability, and performance are critical:

  1. Power Management: Its high drain current and low on-resistance make it suitable for power supply designs, including battery management systems and power converters.
  2. Motor Control: The CSD25401Q3's robust performance and low gate charge are ideal for motor control applications, providing efficient switching and reduced power loss.
  3. Industrial Automation: Its ability to handle high currents and voltages makes it suitable for industrial automation systems, such as motor drives and control circuits.
  4. Automotive Applications: The CSD25401Q3 can be used in automotive systems, such as electric power steering and battery management, where high reliability and performance are essential.

Conclusion of CSD25401Q3

The CSD25401Q3 from Texas Instruments is a high-performance P-Channel MOSFET that offers superior performance, reliability, and efficiency. Its unique features, such as high input capacitance, low gate charge, and robust drain current, make it an ideal choice for demanding applications in power management, motor control, industrial automation, and automotive systems. While the product is now obsolete, its legacy of performance and reliability continues to be recognized in the industry.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
Package Length
Standard Package Name
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Typical Output Capacitance (pF)
Lead Shape
Part Status
Typical Gate to Drain Charge (nC)
Maximum Gate Threshold Voltage (V)
Package Width
Typical Gate Charge @ Vgs (nC)

CSD25401Q3 Documents

Download datasheets and manufacturer documentation for CSD25401Q3

Ersa Assembly/Test Site Revision C 09/Feb/2015      
Ersa CSD25401Q3      
Ersa Multiple Devices 20/Feb/2014      
Ersa CSD25401Q3      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service