STMicroelectronics_STB28N60M2

STMicroelectronics
STB28N60M2  
Single FETs, MOSFETs

STMicroelectronics
STB28N60M2
278-STB28N60M2
Ersa
STMicroelectronics-STB28N60M2-datasheets-1727507.pdf
MOSFET N-CH 600V 22A D2PAK
In Stock : 868

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STB28N60M2 Description

The STB28N60M2 is a high voltage N-channel MOSFET manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and switching mode power supplies (SMPS).

Description:

The STB28N60M2 is a high voltage N-channel MOSFET with a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 28A. It is available in a TO-220 package, which is suitable for use in a variety of power electronic applications.

Features:

  • High voltage operation: The STB28N60M2 is designed to operate at high voltages, making it suitable for use in power electronic applications.
  • Low on-state resistance (RDS(on)): The STB28N60M2 has a low on-state resistance, which helps to minimize power losses and improve efficiency.
  • High switching speed: The STB28N60M2 has a fast switching speed, which makes it suitable for use in high frequency applications.
  • Robustness: The STB28N60M2 is designed to be robust and reliable, with built-in protection features such as over-voltage, over-current, and over-temperature protection.

Applications:

The STB28N60M2 is suitable for use in a variety of power electronic applications, including:

  • Motor control: The STB28N60M2 can be used in motor control applications to switch high currents and control the speed and direction of the motor.
  • Power supplies: The STB28N60M2 can be used in power supplies to switch high currents and regulate the output voltage.
  • Switching mode power supplies (SMPS): The STB28N60M2 can be used in switching mode power supplies to switch high currents and improve efficiency.
  • Inverters: The STB28N60M2 can be used in inverters to switch high currents and convert DC to AC.

Overall, the STB28N60M2 is a high voltage N-channel MOSFET that is designed for use in a variety of power electronic applications. Its high voltage operation, low on-state resistance, and fast switching speed make it a versatile and reliable choice for power electronic applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STB28N60M2 Documents

Download datasheets and manufacturer documentation for STB28N60M2

Ersa STx28N60M2 Datasheet      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STx28N60M2 Datasheet      

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