STMicroelectronics_STW56N65DM2

STMicroelectronics
STW56N65DM2  
Single FETs, MOSFETs

STMicroelectronics
STW56N65DM2
278-STW56N65DM2
Ersa
STMicroelectronics-STW56N65DM2-datasheets-4821039.pdf
MOSFET N-CH 650V 48A TO247
In Stock : 267

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STW56N65DM2 Description

STW56N65DM2 Description

The STW56N65DM2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain to source voltage (Vdss) of 650V and a continuous drain current (Id) of 48A at 25°C, this MOSFET is ideal for use in power electronics applications. The device is manufactured using STMicroelectronics' advanced MDmesh™ DM2 technology, which provides superior performance and reliability.

STW56N65DM2 Features

  • High Voltage and Current Handling: The STW56N65DM2 can handle a drain to source voltage of up to 650V and a continuous drain current of 48A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: The device has a maximum on-resistance (Rds On) of 65mOhm at 24A and 10V, which helps reduce power dissipation and improve efficiency.
  • Advanced MDmesh™ DM2 Technology: This technology provides improved performance, reliability, and thermal stability compared to traditional MOSFET technologies.
  • Robust Gate Charge Characteristics: The STW56N65DM2 has a maximum gate charge (Qg) of 88nC at 10V, which helps reduce switching losses and improve overall efficiency.
  • Compliance with Industry Standards: The device is compliant with the RoHS3 directive and REACH regulations, ensuring environmental and safety compliance.
  • Through Hole Mounting: The STW56N65DM2 is available in a through-hole package, making it suitable for a wide range of applications and easy to integrate into existing designs.

STW56N65DM2 Applications

The STW56N65DM2 is ideal for use in various power electronics applications, including:

  • Power Supplies: Due to its high voltage and current handling capabilities, the STW56N65DM2 is well-suited for use in power supply designs, such as SMPS (Switched-Mode Power Supplies) and DC-DC converters.
  • Industrial Automation: The device's robust performance and reliability make it an excellent choice for use in industrial automation applications, such as motor drives and control systems.
  • Renewable Energy: The STW56N65DM2 can be used in renewable energy applications, such as solar inverters and wind power systems, where high voltage and current handling are required.
  • Electric Vehicles: The device's high performance and reliability make it suitable for use in electric vehicle applications, such as battery management systems and motor controllers.

Conclusion of STW56N65DM2

The STW56N65DM2 is a high-performance N-Channel MOSFET from STMicroelectronics, offering excellent voltage and current handling capabilities, low on-resistance, and advanced MDmesh™ DM2 technology. Its robust performance, compliance with industry standards, and through-hole mounting make it an ideal choice for a wide range of power electronics applications, including power supplies, industrial automation, renewable energy, and electric vehicles.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Forward Transconductance - Min
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STW56N65DM2 Documents

Download datasheets and manufacturer documentation for STW56N65DM2

Ersa Product Change Notification (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)      

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