STMicroelectronics_STD11N50M2

STMicroelectronics
STD11N50M2  
Single FETs, MOSFETs

STMicroelectronics
STD11N50M2
278-STD11N50M2
Ersa
STMicroelectronics-STD11N50M2-datasheets-8903924.pdf
MOSFET N-CH 500V 8A DPAK
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STD11N50M2 Description

STD11N50M2 Description

The STD11N50M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high power dissipation and low on-resistance. This device is part of the MDmesh™ II Plus series, offering superior performance and reliability in various electronic systems. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 8A at 25°C, the STD11N50M2 is well-suited for demanding power management tasks.

STD11N50M2 Features

  • High Power Dissipation: The STD11N50M2 can handle up to 85W of power dissipation at the case temperature (Tc), making it ideal for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 530mOhm at 4A and 10V, this MOSFET offers low power losses and high efficiency.
  • Robust Input Capacitance: The STD11N50M2 has a maximum input capacitance (Ciss) of 395 pF at 100V, ensuring fast switching and minimal signal distortion.
  • Gate Charge Optimization: The maximum gate charge (Qg) is 12 nC at 10V, reducing switching losses and improving overall efficiency.
  • Wide Voltage Range: The device supports a gate-source voltage (Vgs) range of ±25V, providing flexibility in various circuit designs.
  • Compliance with Industry Standards: The STD11N50M2 is compliant with the RoHS3 standard, making it suitable for environmentally conscious applications.

STD11N50M2 Applications

The STD11N50M2 is an excellent choice for applications requiring high power handling and low on-resistance. Some ideal use cases include:

  • Power Supplies: In switch-mode power supplies (SMPS) and power factor correction (PFC) circuits, the STD11N50M2 can efficiently manage high currents and voltages.
  • Motor Control: This MOSFET is suitable for controlling high-power motors in industrial and automotive applications, thanks to its robust design and high power dissipation capabilities.
  • Renewable Energy Systems: The STD11N50M2 can be used in solar inverters and wind turbine power electronics, where high voltage and current handling are essential.

Conclusion of STD11N50M2

The STD11N50M2 is a versatile and powerful N-Channel MOSFET from STMicroelectronics, offering a combination of high power dissipation, low on-resistance, and robust performance. Its compliance with industry standards and wide voltage range make it an ideal choice for various high-power applications, including power supplies, motor control, and renewable energy systems. With its unique features and advantages over similar models, the STD11N50M2 stands out as a reliable and efficient solution for demanding electronic systems.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD11N50M2 Documents

Download datasheets and manufacturer documentation for STD11N50M2

Ersa STx11N50M2      
Ersa Reel Design Change 22/Aug/2022      
Ersa STx11N50M2      

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