STMicroelectronics_STP28NM60ND

STMicroelectronics
STP28NM60ND  
Single FETs, MOSFETs

STMicroelectronics
STP28NM60ND
278-STP28NM60ND
Ersa
STMicroelectronics-STP28NM60ND-datasheets-5422606.pdf
MOSFET N-CH 600V 23A TO220
In Stock : 1000

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STP28NM60ND Description

STP28NM60ND Description

The STP28NM60ND is a high-performance MOSFET N-CH 600V 23A TO220 device manufactured by STMicroelectronics. This single FET is designed to deliver exceptional performance in various electronic applications. With its advanced MOSFET technology, the STP28NM60ND offers superior electrical characteristics, making it an ideal choice for demanding applications.

STP28NM60ND Features

  • 600V Drain to Source Voltage (Vdss): The STP28NM60ND can handle high voltages, making it suitable for applications requiring robust voltage capabilities.
  • 23A Continuous Drain Current (Id): This MOSFET can handle a continuous drain current of 23A, ensuring efficient power handling in various applications.
  • 150mOhm Rds On (Max) @ Id, Vgs: The low on-resistance of the STP28NM60ND contributes to its high efficiency and minimal power loss.
  • 5V Vgs(th) (Max) @ Id: The threshold voltage of the STP28NM60ND is low, allowing for easy gate drive and reduced power consumption.
  • 2090 pF Input Capacitance (Ciss) (Max) @ Vds: The high input capacitance enables fast switching and improved performance in high-frequency applications.
  • 62.5 nC Gate Charge (Qg) (Max) @ Vgs: The low gate charge ensures quick switching and reduced power dissipation.
  • 190W Power Dissipation (Max): The STP28NM60ND can dissipate up to 190W, making it suitable for high-power applications.
  • 150°C Operating Temperature (TJ): The device can operate at high temperatures, ensuring reliable performance in various environments.
  • ROHS3 Compliant: The STP28NM60ND meets environmental regulations, making it an eco-friendly choice for electronic designs.

STP28NM60ND Applications

The STP28NM60ND is ideal for a wide range of applications due to its high voltage and current capabilities, low on-resistance, and high input capacitance. Some specific use cases include:

  1. Power Supplies: The high voltage and current ratings make the STP28NM60ND suitable for power supply designs, where efficient power handling and distribution are critical.
  2. Motor Controls: The low on-resistance and high current capabilities of the STP28NM60ND make it an excellent choice for motor control applications, ensuring efficient power delivery and precise motor control.
  3. Industrial Automation: The robust voltage and current ratings, along with the ability to operate at high temperatures, make the STP28NM60ND ideal for industrial automation applications, where reliability and performance are essential.

Conclusion of STP28NM60ND

The STP28NM60ND is a high-performance MOSFET designed for demanding applications requiring high voltage, current, and power handling capabilities. Its advanced features, such as low on-resistance, high input capacitance, and low gate charge, make it an ideal choice for power supplies, motor controls, and industrial automation applications. The STP28NM60ND's compliance with environmental regulations and ability to operate at high temperatures further enhance its appeal for a wide range of electronic designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP28NM60ND Documents

Download datasheets and manufacturer documentation for STP28NM60ND

Ersa ST(B,F,P,W)28NM60ND Datasheet      

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